Effects of Free Carriers on Zone-Center Vibrational Modes in Heavily Dopedp-type Si. I. Acoustical Modes
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.8.4723/fulltext
Reference19 articles.
1. The Electronic Contribution to the Elastic Properties of Germanium
2. Ultrasonic Wave Propagation in Dopedn-Germanium andp-Silicon
3. ELECTRONIC EFFECT IN THE ELASTIC CONSTANTC′ OF SILICON
4. Electronic Effects in the Elastic Constants ofn-Type Silicon
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