Electronic properties of monolayer steps on (2×4)/c(2×8) reconstructed GaAs(001) surfaces
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.54.4428/fulltext
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1. Attractive interactions between like-oriented surface steps from an ab initio perspective: Role of the elastic and electrostatic contributions;Physical Review B;2019-02-28
2. Erratum: Step energy and step interactions on the reconstructed GaAs(001) surface [Phys. Rev. B 90 , 115314 (2014)];Physical Review B;2016-12-30
3. Step energy and step interactions on the reconstructed GaAs(001) surface;Physical Review B;2014-09-30
4. Shape control of InGaAs nanostructures on nominal GaAs(001): dashes and dots;Nanotechnology;2008-10-30
5. Dramatic dependence of the Fermi level pinning strength on crystal orientation at clean surfaces of n-type In0.53Ga0.47As grown by molecular beam epitaxy;Journal of Crystal Growth;2007-04
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