Dechanneling by dislocations in ion-implanted Al

Author:

Picraux S. T.,Rimini E.,Foti G.,Campisano S. U.

Publisher

American Physical Society (APS)

Cited by 85 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Proton backscattering by point and extended defects in ion-implanted Si;physica status solidi (c);2009-08

2. Radiation damage, range distribution, and site location measurements by channeling technique for Ar, Kr, Xe in Ni after implantation and annealing;SPIE Proceedings;2007-05-04

3. High Energy Ion Beam Analysis Techniques;Materials Science and Technology;2006-09-15

4. RBS/channeling studies of swift heavy ion irradiated InGaAs/GaAs heterostructures;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2006-03

5. Assessment of subsurface damage in polished II–VI semiconductors by ion channeling;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2004-06

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