Hydrogen elimination model of the formation of hydrogen bonding structures during the growth of hydrogenated amorphous silicon by plasma CVD
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.62.16808/fulltext
Reference21 articles.
1. Structural interpretation of the vibrational spectra ofa-Si: H alloys
2. The hydrogen content of a-Ge:H and a-Si:H as determined by ir spectroscopy, gas evolution and nuclear reaction techniques
3. Influence of microstructure on the photoconductivity of glow discharge deposited amorphous SiC:H and amorphous SiGe:H alloys
4. The Influence of the Si-H2Bond on the Light-Induced Effect in a-Si Films and a-Si Solar Cells
5. Principles for controlling the optical and electrical properties of hydrogenated amorphous silicon deposited from a silane plasma
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1. Impact of chemically grown silicon oxide interlayers on the hydrogen distribution at hydrogenated amorphous silicon/crystalline silicon heterointerfaces;Applied Surface Science;2021-11
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3. Improved amorphous/crystalline silicon interface passivation for silicon heterojunction solar cells by hot-wire atomic hydrogen during doped a-Si:H deposition;Applied Surface Science;2019-05
4. Dense restructuring of amorphous silicon network induced by non-bonded hydrogen;Japanese Journal of Applied Physics;2018-06-27
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