Surface segregation behavior of B, Ga, and Sb during Si MBE: Calculations using a first-principles method
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.58.3932/fulltext
Reference19 articles.
1. Acceptor dopants in silicon molecular‐beam epitaxy
2. RHEED studies of Si(100) surface structures induced by Ga evaporation
3. Influence of substrate orientation on surface segregation process in silicon-MBE
4. Arbitrary doping profiles produced by Sb‐doped Si MBE
5. Surface segregation of Sb on Si(100) during molecular beam epitaxy growth
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