Radiative and nonradiative recombination of bound excitons in GaP:N. IV. Formation of phonon sidebands of bound excitons
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.41.2931/fulltext
Reference17 articles.
1. Isoelectronic Traps Due to Nitrogen in Gallium Phosphide
2. Comparison of calculated and measured GaP:N luminescence spectra
3. Model for phonon-assisted indirect recombination at impurity sites in semiconductors: A test of impurity wave-function theories
4. Excited states of excitons bound to nitrogen pairs in GaP
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Behavior of nitrogen impurities in III–V semiconductors;Journal of Luminescence;2000-01
2. Observation of multiphonon emission in excitonic luminescence of GaP : N;Solid State Communications;1995-08
3. Phonon sidebands of excitons bound to isoelectronic impurities in semiconductors;Physical Review B;1993-03-15
4. Reply to ‘‘Comment on ‘Radiative and nonradiative recombination of bound excitons in GaP:N. I. Temperature behavior of zero-phonon line and phonon sidebands of bound excitons’ and ‘Radiative and nonradiative recombination of bound excitons in GaP:N. IV. Formation of phonon sidebands of bound excitons’ ’’;Physical Review B;1992-08-15
5. Comment on ‘‘Radiative and nonradiative recombination of bound excitons in GaP:N. I. Temperature behavior of zero-phonon line and phonon sidebands of bound excitons’’ and ‘‘ Radiative and nonradiative recombination of bound excitons in GaP:N. IV. Formation of phonon sidebands of bound excitons’’;Physical Review B;1992-08-15
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