Comparison of calculated and measured GaP:N luminescence spectra
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,Biochemistry,General Chemistry,Atomic and Molecular Physics, and Optics,Biophysics
Reference5 articles.
1. P. Snyder, Ph.D. thesis dissertation (unpublished).
2. P. Snyder, M.A. Gundersen, and C.W. Myles (to be published).
3. Nitrogen isoelectronic trap inGaAs1−xPx: II. Model calculation of the electronic statesNΓandNXat low temperature
4. A Semi-empirical tight-binding theory of the electronic structure of semiconductors†
5. Lattice Dynamics and Thermodynamic Properties of β-ZnS, GaP and β-SiC
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Behavior of nitrogen impurities in III–V semiconductors;Journal of Luminescence;2000-01
2. Phonon sidebands of excitons bound to isoelectronic impurities in semiconductors;Physical Review B;1993-03-15
3. 'Similarity law' in the phonon spectrum of bound exciton luminescence in GaP:N;Journal of Physics: Condensed Matter;1990-06-11
4. Radiative and nonradiative recombination of bound excitons in GaP:N. IV. Formation of phonon sidebands of bound excitons;Physical Review B;1990-02-15
5. Phonon-assisted indirect recombination of bound excitons in N-doped GaP, including near-resonant processes;Physical Review B;1988-01-15
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