Photoemission study of the surface electronic structure of InSb(110)
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.30.4528/fulltext
Reference26 articles.
1. Semiconductor Surface Reconstruction: The Rippled Geometry of GaAs(110)
2. Atomic geometry of semiconductor surfaces
3. Dynamical analysis of low-energy-electron-diffraction intensities from InSb(110)
4. Angle-resolved photoemission, valence-band dispersionsE(k→), and electron and hole lifetimes for GaAs
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