Identification of the double acceptor state of isolated nickel in gallium arsenide-Reference-Cited by-同舟云学术

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Identification of the double acceptor state of isolated nickel in gallium arsenide

Published:1984-03-01 Issue:5 Volume:29 Page:2438-2442
ISSN:0163-1829
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Drożdżewicz W.,Hennel A. M.,Wasilewski Z.,Clerjaud B.,Gendron F.,Porte C.,Germer R.

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.29.2438/fulltext

Reference20 articles.

1. Point Defects in GaP, GaAs, and InP

2. ESR of the doubly ionized Cr acceptor and infrared luminescence of Cr in GaP:Cr

3. ESR identification of the iron double electron trap state in GaP

4. Optical and EPR study of the nickel two-electron-trap state in GaP

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Absorption of Deep Centres and Bound Excitons;Springer Series in Solid-State Sciences;2011-10-27

2. Chapter 5 Transition Metals in III/V Compounds;Imperfections in III/V Materials;1993

3. Identification of the double and single acceptor state of isolated NiGa in GaAs;Applied Surface Science;1991-06

4. Identification of a nickel double‐acceptor state in indium phosphide;Applied Physics Letters;1989-09-11

5. Spectroscopic study of CdTe layers grown by molecular‐beam epitaxy on (001) and (111) Cd0.96Zn0.04Te substrates;Journal of Applied Physics;1989-08

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