Relaxation of persistent photoconductivity inAl0.3Ga0.7As
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.42.5855/fulltext
Reference24 articles.
1. Large-Lattice-Relaxation Model for Persistent Photoconductivity in Compound Semiconductors
2. Trapping characteristics and a donor-complex (DX) model for the persistent-photoconductivity trapping center in Te-dopedAlxGa1−xAs
3. Theory of the Atomic and Electronic Structure ofDXCenters in GaAs andAlxGa1−xAsAlloys
4. Energetics ofDX-center formation in GaAs andAlxGa1−xAs alloys
5. Magnetic studies of persistent photoconductivity inn-AlxGa1−xAs
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