Arsenic redistribution at theSiO2/Siinterface during oxidation of implanted silicon
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.58.10990/fulltext
Reference24 articles.
1. Redistribution of Acceptor and Donor Impurities during Thermal Oxidation of Silicon
2. The Diffusion of Ion‐Implanted Arsenic in Silicon
3. Theory and Direct Measurement of Boron Segregation in SiO2 during Dry, Near Dry, and Wet O 2 Oxidation
4. Oxidation of Si implanted with nondopant, metallic ions
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