Exciton localization inInxGa1−xAs/GaAs quantum wells observed by temperature-modulated photoluminescence
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.43.1546/fulltext
Reference20 articles.
1. Temperature-modulated photoluminescence of GaP: N
2. Temperature-dependent tunnelling of excitons in nitrogen-doped GaP
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