Carrier-induced transition from excitonic to free-carrier-like radiative recombination in a semiconductor quantum well studied by magnetoluminescence
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.39.13024/fulltext
Reference13 articles.
1. Room-temperature excitonic nonlinear-optical effects in semiconductor quantum-well structures
2. Large room‐temperature optical nonlinearity in GaAs/Ga1−x AlxAs multiple quantum well structures
3. Investigation of optical processes in a semiconductor 2D electron plasma
4. Carrier-Induced Energy-Gap Shrinkage in Current-Injection GaAs/AlGaAs MQW Heterostructures
5. Optical reading of field‐effect transistors by phase‐space absorption quenching in a single InGaAs quantum well conducting channel
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2. Magnetic field induced Mott transition of a one-component electron plasma in GaAs quantum wells;Solid State Communications;1997-11
3. Evolution from 2DEG to Excitonic Spectra in a Modulation-Doped GaAs/AlGaAs Single Quantum Well;physica status solidi (a);1997-11
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