Magnetic field induced Mott transition of a one-component electron plasma in GaAs quantum wells
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference17 articles.
1. Metal-insulator transition in a doped semiconductor
2. Linear and nonlinear optical properties of semiconductor quantum wells
3. Magnetic-Field-Induced Metal-Insulator Transitions in Multiple-Quantum-Well Structures
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2. Observation of Photoinduced Terahertz Gain in GaAs Quantum Wells: Evidence for Radiative Two-Exciton-to-Biexciton Scattering;Physical Review Letters;2020-10-16
3. Recombination dynamics of Landau levels in an InGaAs/InP quantum well;Physical Review B;2018-10-22
4. Transient transition from free carrier metallic state to exciton insulating state in GaAs by ultrafast photoexcitation;New Journal of Physics;2018-03-27
5. Stability of High-Density Two-Dimensional Excitons against a Mott Transition in High Magnetic Fields Probed by Coherent Terahertz Spectroscopy;Physical Review Letters;2016-11-10
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