Valence-band offset variation induced by the interface dipole at theSiO2/Si(111)interface
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.64.155325/fulltext
Reference35 articles.
1. The electronic structure at the atomic scale of ultrathin gate oxides
2. Structural transition layer atSiO2/Siinterfaces
3. Atomic structure of SiO2 at SiO2/Si interfaces
4. Bonding Arrangements at theSi−SiO2andSiC−SiO2Interfaces and a Possible Origin of their Contrasting Properties
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