Temperature dependence of the band overlap in InAs/GaSb structures
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.51.1729/fulltext
Reference11 articles.
1. Determination of band gap and effective masses in InAs/Ga1−xInxSb superlattices
2. Piezoelectric effects in superlattices
3. GaSb-InAs-GaSb heterostructures studied under hydrostatic pressure
4. [001]- and piezoelectric-[111]-oriented InAs/GaSb structures under hydrostatic pressure
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1. Optoelectronic Transport Properties of Nanostructured Multi-Quantum Well InAs/GaSb Type II LWIR and MWIR Detectors;Journal of Electronic Materials;2022-09-21
2. Structural, morphological and magnetotransport properties of composite semiconducting and semimetallic InAs/GaSb superlattice structure;Materials Advances;2020
3. Correlation between electronic bands structure and magneto-transport properties of nanostructure type II superlattice for terahertz detection;Superlattices and Microstructures;2019-03
4. Electronic band structure and Shubnikov–de Haas effect in two-dimensional semimetallic InAs/GaSb nanostructure superlattice;Applied Physics A;2016-01-22
5. Experimental determination of band overlap in type II InAs/GaSb superlattice based on temperature dependent photoluminescence signal;Solid State Communications;2015-12
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