Stacking faults in3C−, 4H−,and6H−SiCpolytypes investigated by anab initiosupercell method
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.67.155204/fulltext
Reference33 articles.
1. Crystal Defects as Source of Anomalous Forward Voltage Increase of 4H-SiC Diodes
2. Application of optical emission microscopy for reliability studies in 4H–SiC p+/n−/n+ diodes
3. Structure of recombination-induced stacking faults in high-voltage SiC p–n junctions
4. Localized electronic states around stacking faults in silicon carbide
5. Electronic Localization around Stacking Faults in Silicon Carbide
Cited by 157 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. The reinforcement of reaction-bonded boron carbide via adjusting SiC morphology controlled by carbon sources;Journal of the European Ceramic Society;2024-12
2. Ab initio study of helium behavior near stacking faults in 3C-SiC;Journal of Physics D: Applied Physics;2024-07-30
3. Stacking faults in 4H–SiC epilayers and IGBTs;Materials Science in Semiconductor Processing;2024-07
4. Observation of broad triangular Frank-type stacking faults and characterization of stacking faults with emission wavelengths below 430 nm in 4H–SiC epitaxial layers;Applied Physics Letters;2024-04-08
5. Molecular dynamics simulating the effects of Shockley-type stacking faults on the radiation displacement cascades in 4H-SiC;RSC Advances;2024
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3