Impact ionization in InSb probed by terahertz pump—terahertz probe spectroscopy-Reference-Cited by-同舟云学术

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Impact ionization in InSb probed by terahertz pump—terahertz probe spectroscopy

Published:2009-04-06 Issue:16 Volume:79 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Hoffmann Matthias C.,Hebling János,Hwang Harold Y.,Yeh Ka-Lo,Nelson Keith A.

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.79.161201/fulltext

Reference34 articles.

1. Optical and Photo-Electrical Properties of Indium Antimonide

2. Nonequilibrium Carrier Phenomena inn-Type InSb

3. Electron gas heating and cooling effects by microwave electric fields in compensated InSb

4. Current oscillations and microwave emission in indium antimonide

5. Band structure of indium antimonide

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3. Ionization of a Silicon Surface Layer Induced by a High-Intensity Subpicosecond Electric Field;Journal of Infrared, Millimeter, and Terahertz Waves;2024-02-28

4. Third harmonic generation due to free carrier in InSb using a terahertz free electron laser;Optics Letters;2024-02-15

5. Interplay between intervalley scattering and impact ionization induced by intense terahertz pulses in InSb thin films;Physical Review B;2024-01-08

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