Third harmonic generation due to free carrier in InSb using a terahertz free electron laser-Reference-Cited by-同舟云学术

Third harmonic generation due to free carrier in InSb using a terahertz free electron laser

Published:2024-02-15 Issue:4 Volume:49 Page:1073
ISSN:0146-9592
Container-title:Optics Letters
language:en
Short-container-title:Opt. Lett.

Author:

Khoa Phan Thanh Nhat,Tomoki Shimizu,Wang You Wei,Kato Kosaku^ORCID,Agulto Verdad C.,Isoyama Goro¹,Fujioka Shinsuke^ORCID,Nakajima Makoto^ORCID

Affiliation:

1. Osaka University

Abstract

We report on the third harmonic generation (THG) in InSb semiconductor irradiated by a terahertz (THz) free electron laser (FEL). The conversion of 4 THz (wavelength 70 µm) FEL outputs into its third harmonic 12 THz was observed. We found that by tuning the sample temperature to 360 K, high conversion efficiency up to 1% can be obtained and is the highest in the THz and FIR regions below 10 THz. We also discuss the observed intensity dependence of the THG with the nonlinear order lower than 3 when the pumping intensity was high.

Funder

Japan Society for the Promotion of Science KAKENHI

Publisher

Optica Publishing Group

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