First-principles simulations of copper diffusion in tantalum and tantalum nitride
Author:
Publisher
American Physical Society (APS)
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.79.214104/fulltext
Reference43 articles.
1. Barrier properties and failure mechanism of Ta–Si–N thin films for Cu interconnection
2. Copper interconnections and reliability
3. Ultrathin Diffusion Barriers/Liners for Gigascale Copper Metallization
4. Application of equilibrium thermodynamics to the development of diffusion barriers for copper metallization (invited)
5. Effect of crystallinity and preferred orientation of Ta2N films on diffusion barrier properties for copper metallization
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