Random-walk mechanism for step retraction on hydrogen-etched Si(111)
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.56.1021/fulltext
Reference17 articles.
1. Adsorption kinetics of SiH4, Si2H6 and Si3H8 on the Si(111)-(7×7) surface
2. Reaction of atomic hydrogen with crystalline silicon
3. Silicon hydride etch products from the reaction of atomic hydrogen with Si(100)
4. The driving force behind the chemistry of hydrogen on the Si(111)-7×7 surface
5. Investigation of Hydrogen Plasma Etched Si Surfaces
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1. Surface etching induced by Ce silicide formation on Si(100);Surface Science;2007-09
2. Role of step roughening in the formation of Ce silicide on Si(111);Surface Science;2005-04
3. Nanopatterning of periodically strained surfaces: Predictive kinetic Monte Carlo simulation study;Journal of Applied Physics;2003-09
4. MAGNETIC INSTABILITY IN A PARITY INVARIANT TWO-DIMENSIONAL FERMION SYSTEM;International Journal of Modern Physics B;2000-06-10
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