Shubnikov-de Haas effect in submicron-widthGaAs/Ga1−xAlxAsheterojunction wires
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.36.4551/fulltext
Reference19 articles.
1. Localization and Electron-Electron Interaction Effects in Submicron-Width Inversion Layers
2. Universal conductance fluctuations in silicon inversion-layer nanostructures
3. Magnetoconductance and quantized confinement in narrow silicon inversion layers
4. One-Dimensional Localization and Interaction Effects in Narrow (0.1-μm) Silicon Inversion Layers
5. Quasi-one-dimensional effects in submicron width silicon inversion layers
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1. Width dependence of quantum lifetimes in GaAs/AlxGa1−xAs heterostructures;Physical Review B;1996-06-15
2. Characterization of the transport properties of channel delta‐doped structures by light‐modulated Shubnikov–de Haas measurements;Journal of Applied Physics;1995-12
3. Quantum wires with the tunable width of conducting channel in In0.53Ga0.47As/InP heterostructures;Superlattices and Microstructures;1994-09
4. Conductance fluctuations in a quasi-ballistic narrow wire confined by split metal gates;Physica B: Condensed Matter;1993-02
5. Single-particle relaxation time of one-dimensional electron gases;Physical Review B;1992-07-15
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