Magnetoconductance and quantized confinement in narrow silicon inversion layers-Reference-Cited by-同舟云学术

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Magnetoconductance and quantized confinement in narrow silicon inversion layers

Published:1984-07 Issue:1-3 Volume:142 Page:14-18
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Skocpol W.J.,Jackel L.D.,Howard R.E.,Craighead H.G.,Fetter L.A.,Mankiewich P.M.,Grabbe P.,Tennant D.M.

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference2 articles.

1. One-Dimensional Localization and Interaction Effects in Narrow (0.1-μm) Silicon Inversion Layers

2. 10‐nm linewidth electron beam lithography on GaAs

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