Band nonparabolicities in lattice-mismatch-strained bulk semiconductor layers
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.41.8431/fulltext
Reference16 articles.
1. Photoluminescence studies of the effects of interruption during the growth of single GaAs/Al0.37Ga0.63As quantum wells
2. Excitonic transitions in strained-layerInxGa1−xAs/InP quantum wells
3. Band nonparabolicity effects in semiconductor quantum wells
4. Momentum-mixing-induced enhancement of band nonparabolicity in GaAs-Ga1−xAlxAssuperlattices
5. Strain-induced conduction-band nonparabolicity of GaAs-GaAs1−xPxsuperlattices
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