Calculation of band structure and optical gain of type-II GaSbBi/GaAs quantum wells using 14-band k·p Hamiltonian
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference44 articles.
1. Valence band anticrossing model for GaSb1−Bi and GaP1−Bi using k.p method
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4. First-principles calculations of bismuth induced changes in the band structure of dilute Ga–V–Bi and In–V–Bi alloys: chemical trends versus experimental data
5. Influence of Bi-related impurity states on the bandgap and spin–orbit splitting energy of dilute III–V-Bi alloys: InP1−xBix, InAs1−xBix, InSb1−xBix and GaSb1−xBix
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1. Analyzing k · p modeling in highly mismatched alloys and other III–V semiconductors;Journal of Applied Physics;2023-12-20
2. Theoretical electronic and optical properties of AlGaAsN/GaAs quantum well using 10 band kp approach;Indian Journal of Physics;2023-06-12
3. Tuning the Nonlinear Optical Properties of Quantum Dot by Noise-Anharmonicity Interaction;Atoms;2022-10-25
4. InPNBi/InP heterostructures for optoelectronic applications: A k‧p investigation;Materials Science in Semiconductor Processing;2022-10
5. Profiles of Optical Gain of Impurity‐Doped Quantum Dots under the Stewardship of Gaussian White Noise;physica status solidi (b);2022-03-15
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