Electronic and optical properties of strained Ge/Si superlattices
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.43.14597/fulltext
Reference61 articles.
1. Structurally induced optical transitions in Ge-Si superlattices
2. Electronic structure of Ge/Si monolayer strained-layer superlattices
3. Symmetrically strained Si/Ge superlattices on Si substrates
4. Theory of direct optical transitions in an optical indirect semiconductor with a superlattice structure
5. Electronic properties of the (100) (Si)/(Ge) strained-layer superlattices
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