Charged impurity scattering in top-gated graphene nanostructures
Author:
Publisher
American Physical Society (APS)
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.86.121409/fulltext
Reference18 articles.
1. Ultrahigh electron mobility in suspended graphene
2. Mobility in graphene double gate field effect transistors
3. Top-Gated Epitaxial Graphene FETs on Si-Face SiC Wafers With a Peak Transconductance of 600 mS/mm
4. Top gated graphene transistors with different gate insulators
5. Dielectric thickness dependence of carrier mobility in graphene with HfO2 top dielectric
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