Drift velocity saturation in field-effect transistors based on single CdSe nanowires
Author:
Affiliation:
1. Key Laboratory of Optoelectronic Technology and Systems (Ministry of Education), College of Optoelectronic Engineering, Chongqing University, Chongqing 400044, China
Abstract
Funder
National Natural Science Foundation of China
Fundamental Research Funds for the Central Universities
Natural Science Foundation of Chongqing
Publisher
Royal Society of Chemistry (RSC)
Subject
Physical and Theoretical Chemistry,General Physics and Astronomy
Link
http://pubs.rsc.org/en/content/articlepdf/2023/CP/D3CP03341D
Reference38 articles.
1. Barrier Height Inhomogeneity in Mixed-Dimensional Graphene/Single CdSe Nanobelt Schottky Junctions
2. Thin-Film Solar Cells with 19% Efficiency by Thermal Evaporation of CdSe and CdTe
3. High-Performance Organic-Inorganic Hybrid Photodetectors Based on P3HT:CdSe Nanowire Heterojunctions on Rigid and Flexible Substrates
4. Surface plasmon propelled high-performance CdSe nanoribbons photodetector
5. Synthesis of High Quality n-type CdSe Nanobelts and Their Applications in Nanodevices
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