Band discontinuity at the (311)AGaAs/AlAs interface and possibility of its control by Si insertion layers
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.50.17242/fulltext
Reference20 articles.
1. Modification of heterojunction band offsets by thin layers at interfaces: Role of the interface dipole
2. Tuning band offsets at semiconductor interfaces by intralayer deposition
3. Tuning AlAs-GaAs band discontinuities and the role of Si-induced local interface dipoles
4. Roles of a Si insertion layer at GaAs/AlAs heterointerface determined by x-ray photoemission spectroscopy
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1. Control of band discontinuity at III–V semiconductor interface by Si intralayers;Materials Science and Engineering: B;2004-03
2. Si and Be intralayers at GaAs/AlAs and GaAs/GaAs junctions: Low-temperature photoemission measurements;Physical Review B;2000-06-15
3. Control of band discontinuities at (100) GaAs/AlAs interfaces by ZnSe insertion layers: Comparison with Si insertion layers;Physical Review B;1997-12-15
4. Band discontinuities at the (100) interfaces with In- and P-insertion layers: Effects of isoelectronic impurity layers;Solid State Communications;1997-01
5. Effects of ZnSe and P insertion layers on band offsets at (100) GaAs/AlAs interfaces;Applied Surface Science;1996-11
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