Photoluminescence ina-Si1−xGex:H alloys
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.35.9222/fulltext
Reference17 articles.
1. Luminescence and recombination in hydrogenated amorphous silicon
2. Kinetics of distant-pair recombination
3. Radiative and non-radiative tunnelling in glow-discharge and sputtered amorphous silicon
4. Existence of a universal low-energy tail in the photoluminescence ofa-Si1−xGex:H alloys
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1. The shape of the PL band in a-Si:H and its alloys of carbon and nitrogen;Journal of Non-Crystalline Solids;1993-12
2. Photogeneration and recombination of carriers in hydrogenated amorphous silicon germanium alloys;Solar Energy Materials and Solar Cells;1993-08
3. Defects in hydrogenated amorphous silicon-germanium alloys studied by photomodulation spectroscopy;Physical Review B;1991-05-15
4. Dependence of the saturated light‐induced defect density on macroscopic properties of hydrogenated amorphous silicon;Applied Physics Letters;1990-10
5. Gap States in a-SiGe:H Examined by the Constant Photocurrent Method;Japanese Journal of Applied Physics;1990-08-20
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