Growth and atomic geometry of bismuth and antimony on InP(110) studied using low-energy electron diffraction
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.45.11896/fulltext
Reference69 articles.
1. Models of column III and V elements on GaAs (110): Application to MBE
2. Experimental determination of the bonding of column 3 and 5 elements on GaAs
3. Bonding of antimony on GaAs(110): A prototypical system for adsorption of column-V elements on III-V compounds
4. Dynamical analysis of low-energy electron diffraction intensities from GaAs(110)-p(1×1)-Sb(1 ML)
5. Elastic low‐energy electron diffraction from GaAs(110)‐p(1×1)‐Sb(1 ML)
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