Equilibrium shapes and energies of coherent strained InP islands
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.60.17008/fulltext
Reference73 articles.
1. Dislocation-free Stranski-Krastanow growth of Ge on Si(100)
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3. Onset of incoherency and defect introduction in the initial stages of molecular beam epitaxical growth of highly strained InxGa1−xAs on GaAs(100)
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5. A Model for Strain-Induced Roughening and Coherent Island Growth
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