Ultrafast electron dynamics reveal the high potential of InSe for hot-carrier optoelectronics-Reference-Cited by-同舟云学术

Ultrafast electron dynamics reveal the high potential of InSe for hot-carrier optoelectronics

Published:2018-06-04 Issue:24 Volume:97 Page:
ISSN:2469-9950
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Chen Zhesheng,Giorgetti Christine,Sjakste Jelena,Cabouat Raphael,Véniard Valérie,Zhang Zailan,Taleb-Ibrahimi Amina,Papalazarou Evangelos,Marsi Marino,Shukla Abhay,Peretti Jacques,Perfetti Luca

Funder

Labex

Seventh Framework Programme

Grand Équipement National De Calcul Intensif

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.97.241201/fulltext

Reference34 articles.

1. Atomically ThinMoS2: A New Direct-Gap Semiconductor

2. Layer-controlled band gap and anisotropic excitons in few-layer black phosphorus

3. Tuning the Bandgap of Exfoliated InSe Nanosheets by Quantum Confinement

4. Control of valley polarization in monolayer MoS2 by optical helicity

5. Single-layer MoS2 transistors

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