Nonlinear elasticity in III-N compounds:Ab initiocalculations
Author:
Publisher
American Physical Society (APS)
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.72.245201/fulltext
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1. Theory of the anomalously low band-gap pressure coefficients in strained-layer semiconductor alloys
2. Effective elastic stiffnesses of InAs under uniform strain
3. Photoluminescence from self-assembled long-wavelength InAs/GaAs quantum dots under pressure
4. Photoluminescence pressure coefficients ofInAs∕GaAsquantum dots
5. First-principles calculation of the elastic stiffness tensor of aluminium nitride under high pressure
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