Anisotropic kinetics of vacancy diffusion and annihilation on Si(001) surfaces studied by scanning reflection electron microscopy
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.55.9699/fulltext
Reference24 articles.
1. Si(001) Dimer Structure Observed with Scanning Tunneling Microscopy
2. Anisotropy in surface migration of Si and Ge on Si(001)
3. Surface self-diffusion of Si on Si(001)
4. Order-disorder transition on Si(001): c(4 × 2) to (2 × 1)
5. Direct observation of an increase in buckled dimers on Si(001) at low temperature
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