Theoretical study of the mechanism of dry oxidation of4H-SiC-Reference-Cited by-同舟云学术

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Theoretical study of the mechanism of dry oxidation of4H-SiC

Published:2005-06-23 Issue:23 Volume:71 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Knaup Jan M.,Deák Peter,Frauenheim Thomas,Gali Adam,Hajnal Zoltán,Choyke W. J.

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.71.235321/fulltext

Reference52 articles.

1. Intrinsic SiC/SiO2 Interface States

2. Effect of nitric oxide annealing on the interface trap densities near the band edges in the 4H polytype of silicon carbide

3. Interface states atSiO2/6H−SiC(0001)interfaces observed by x-ray photoelectron spectroscopy measurements under bias: Comparison between dry and wet oxidation

4. “Carbon cluster model” for electronic states at interfaces

5. Shallow electron traps at the 4H–SiC/SiO2 interface

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1. Influence of Temperature, Oxygen Partial Pressure, and Microstructure on the High-Temperature Oxidation Behavior of the SiC Layer of TRISO Particles;Journal of the European Ceramic Society;2024-09

2. Lowering of interface state density between deposited gate oxide and SiC substrate via controlling substrate oxidation;Vacuum;2024-04

3. Thermal transport mechanism of 4H–SiC/SiO₂ heterostructures: a molecular dynamics study;Physica Scripta;2023-12-26

4. Temperature-dependent electroluminescence of a gate pulsed silicon carbide metal–oxide–semiconductor field-effect transistor: Insight into interface traps;Journal of Applied Physics;2023-07-19

5. Improvement of interface properties in SiC(0001) MOS structures by plasma nitridation of SiC surface followed by SiO₂ deposition and CO₂ annealing;Applied Physics Express;2023-07-01

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