High-resolution synchrotron-radiation core-level spectroscopy of decapped GaAs(100) surfaces
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.43.14301/fulltext
Reference17 articles.
1. Low-temperature formation of metal/molecular-beam epitaxy-GaAs(100) interfaces: Approaching ideal chemical and electronic limits
2. Interface states and Schottky barrier formation at metal/GaAs junctions
3. Morphological study of Ag, In, Sb, and Bi overlayers on GaAs(100)
4. Structure of GaAs(001)(2×4)−c(2×8)Determined by Scanning Tunneling Microscopy
5. Atomic structure of GaAs(100)‐(2×1) and (2×4) reconstructed surfaces
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