Electronic and optical properties of laterally composition-modulatedAlxIn1−xAs,GaxIn1−xP,andGaxIn1−xAsalloys
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.57.12245/fulltext
Reference35 articles.
1. Compositional modulation and long‐range ordering in GaP/InP short‐period superlattices grown by gas source molecular beam epitaxy
2. Experimental evidence for a spontaneously generated effective mass lateral superlattice
3. Spontaneously generated effective-mass lateral superlattices
4. GaxIn1−xP multiple‐quantum‐wire heterostructures prepared by the strain induced lateral layer ordering process
5. Formation of lateral quantum wells in vertical short‐period superlattices by strain‐induced lateral‐layer ordering process
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1. Large redshift in photoluminescence of InAs/AlAs short-period superlattices due to highly ordered lateral composition modulation;Journal of Vacuum Science & Technology A;2023-06-06
2. Interband transitions of InAs/AlAs Short-Period superlattices grown by molecular beam epitaxy;Journal of Crystal Growth;2023-03
3. Epitaxial II-VI semiconductor quantum structures involving dilute magnetic semiconductors;Chalcogenide;2020
4. Detailed carrier recombination in lateral composition modulation structure;Applied Physics Express;2018-08-03
5. Optical anisotropy and diamagnetic energy shifts in InP–GaP lateral quantum wells;Journal of Luminescence;2014-07
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