Evidence for near-infrared photoluminescence of nitrogen vacancy centers in4H-SiC-Reference-Cited by-同舟云学术

Evidence for near-infrared photoluminescence of nitrogen vacancy centers in4H-SiC

Published:2016-08-05 Issue:6 Volume:94 Page:
ISSN:2469-9950
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Zargaleh S. A.,Eble B.,Hameau S.,Cantin J.-L.,Legrand L.,Bernard M.,Margaillan F.,Lauret J.-S.,Roch J.-F.,von Bardeleben H. J.,Rauls E.,Gerstmann U.,Treussart F.

Funder

Agence Nationale de la Recherche

Deutsche Forschungsgemeinschaft

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.94.060102/fulltext

Reference34 articles.

1. Quantum Spintronics: Engineering and Manipulating Atom-Like Spins in Semiconductors

2. A quantum memory intrinsic to single nitrogen–vacancy centres in diamond

3. Nanoscale Nuclear Magnetic Resonance with a Nitrogen-Vacancy Spin Sensor

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