Effect of image forces on the binding energies of impurity atoms inGa1−xAlxAs/GaAs/Ga1−xAlxAs quantum wells
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.46.2621/fulltext
Reference23 articles.
1. GaAs Epitaxy by a Molecular Beam Method: Observations of Surface Structure on the (001) Face
2. The Use of Metal-Organics in the Preparation of Semiconductor Materials
3. Electron transport and band structure ofGa1−xAlxAsalloys
4. Energy band alignment in GaAs:(Al,Ga)As heterostructures: The dependence on alloy composition
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