Type-II band alignment in Si/Si1−xGexquantum wells from photoluminescence line shifts due to optically induced band-bending effects: Experiment and theory-Reference-Cited by-同舟云学术

Type-II band alignment in Si/Si1−xGexquantum wells from photoluminescence line shifts due to optically induced band-bending effects: Experiment and theory

Published:1994-11-15 Issue:20 Volume:50 Page:15191-15196
ISSN:0163-1829
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Baier T.,Mantz U.,Thonke K.,Sauer R.,Schäffler F.,Herzog H.-J.

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.50.15191/fulltext

Reference12 articles.

1. Band alignments of coherently strained GexSi1−x/Si heterostructures on 〈001〉 GeySi1−ysubstrates

2. Photoluminescence from pseudomorphic Si1−xGex quantum wells grown by molecular beam epitaxy: Variation of the band gap with high pressure

3. Optical investigation of interwell coupling in strained Si1−xGex/Si quantum wells

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