Optical investigation of interwell coupling in strained Si1−xGex/Si quantum wells
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.110480
Reference14 articles.
1. Photoluminescence and excitation spectroscopy in coupled GaAs-Ga(Al)As quantum wells
2. Photoinduced Space-Charge Buildup by Asymmetric Electron and Hole Tunneling in Coupled Quantum Wells
3. Tunneling-controlled photoluminescence in nonresonantly coupled single quantum wells
4. Tunneling-controlled photoluminescence in nonresonantly coupled single quantum wells
5. Direct Observation of Superlattice Formation in a Semiconductor Heterostructure
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2. Signature of optical absorption in highly strained and partially relaxed InP/GaAs type-II quantum well superlattice structures;Journal of Applied Physics;2012-11
3. An artificial nonradiative recombination center model created by use of a Si1−xGex/Si quantum-well-inserted pseudomorphic superlattice;Thin Solid Films;2012-02
4. Investigation of the local density of states in self-assembled GeSi/Si(001) nanoislands by combined scanning tunneling and atomic-force microscopy;Semiconductors;2011-03
5. Auger recombination in Si1-xGex/Si quantum wells under high-density photoexcitation;physica status solidi (c);2011-01-25
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