Effect of buffer layer coupling on the lattice parameter of epitaxial graphene on SiC(0001)-Reference-Cited by-同舟云学术

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Effect of buffer layer coupling on the lattice parameter of epitaxial graphene on SiC(0001)

Published:2014-07-08 Issue:4 Volume:90 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Schumann T.,Dubslaff M.,Oliveira M. H.,Hanke M.,Lopes J. M. J.,Riechert H.

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.90.041403/fulltext

Reference39 articles.

1. A roadmap for graphene

2. Production and processing of graphene and 2d crystals

3. Graphene Epitaxy by Chemical Vapor Deposition on SiC

4. van der Waals Epitaxial Growth of Graphene on Sapphire by Chemical Vapor Deposition without a Metal Catalyst

5. Mono- and few-layer nanocrystalline graphene grown on Al2O3(0001) by molecular beam epitaxy

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