Ab initiocalculation of Peierls stress in silicon
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.63.045206/fulltext
Reference27 articles.
1. Plastic deformation of InP at temperatures between 77 and 500 K
2. Yield Strength of Diamond
3. The plastic deformation of silicon between 300°C and 600°C
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