Deformation induced new pathways in silicon-Reference-Cited by-同舟云学术

Deformation induced new pathways in silicon

Author:

Zhang Zhenyu¹²³⁴^ORCID,Cui Junfeng¹²³⁴⁵,Chang Keke⁵⁶⁷⁸⁴,Liu Dongdong¹²³⁴⁵,Chen Guoxin⁵⁶⁷⁸⁴,Jiang Nan⁵⁶⁷⁸⁴,Guo Dongming¹²³⁴

Affiliation:

1. Key Laboratory for Precision and Non-Traditional Machining Technology of Ministry of Education

2. Dalian University of Technology

3. Dalian 116024

4. China

5. Key Laboratory of Marine Materials and Related Technologies

6. Ningbo Institute of Materials Technology and Engineering

7. Chinese Academy of Sciences

8. Ningbo 315201

Abstract

A new transition from Si-I to Si-VI is induced via in situ TEM nanoindentation, which has not been reported previously.

Funder

National Natural Science Foundation of China

Changjiang Scholar Program of Chinese Ministry of Education

Dalian University of Technology

State Key Laboratory of Tribology

State Key Laboratory of Metastable Materials Science and Technology

Collaborative Innovation Center of Major Machine Manufacturing in Liaoning

Chinese Academy of Sciences

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

Reference37 articles.

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献