Band-offset ratio dependence on the effective-mass Hamiltonian based on a modified profile of the GaAs-AlxGa1−xAs quantum well
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.47.12760/fulltext
Reference34 articles.
1. Quantum States of Confined Carriers in Very ThinAlxGa1−xAs-GaAs-AlxGa1−xAsHeterostructures
2. Energy-gap discontinuities and effective masses forGaAs−AlxGa1−xAsquantum wells
3. Parabolic quantum wells with theGaAs−AlxGa1−xAssystem
4. Size quantization and band-offset determination in GaAs-GaAlAs separate confinement heterostructures
5. Staggered band alignments in AlGaAs heterojunctions and the determination of valence‐band offsets
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