Interfacial structure, bonding and composition of InAs and GaSb thin films determined using coherent Bragg rod analysis-Reference-Cited by-同舟云学术

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Interfacial structure, bonding and composition of InAs and GaSb thin films determined using coherent Bragg rod analysis

Published:2007-03-08 Issue:11 Volume:75 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Cionca C. N.,Walko D. A.,Yacoby Y.,Dorin C.,Mirecki Millunchick J.,Clarke R.

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.75.115306/fulltext

Reference21 articles.

1. Electronic and Optoelectronic Properties of Semiconductor Structures

2. Calculation of iii–v ternary phase diagrams: In-Ga-As and In-As-Sb

3. Effects of interfacial atomic segregation and intermixing on the electronic properties of InAs/GaSb superlattices

4. Predicting interband transition energies for InAs/GaSb superlattices using the empirical pseudopotential method

5. Effect of interface structure on the optical properties of InAs/GaSb laser active regions

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Spin-selective thermoelectric transport along a vibrating α-helical protein molecule;Journal of Physics: Condensed Matter;2022-10-05

2. Structural properties of ferroelectric heterostructures using coherent bragg rod analysis;Current Applied Physics;2020-04

3. High‐Resolution Crystal Truncation Rod Scattering: Application to Ultrathin Layers and Buried Interfaces;Advanced Materials Interfaces;2020-02-20

4. Atomic resolution of interface diffusing in short-period InAs/GaSb superlattice;Journal of Applied Physics;2018-12-28

5. Combined cross sectional scanning tunneling microscopy and high resolution x-ray diffraction study for quantitative structural descriptions of type-II superlattice infrared detectors;Applied Physics Letters;2012-12-10

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