Limits and accuracy of valence force field models forInxGa1−xNalloys
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.63.085207/fulltext
Reference30 articles.
1. Phase separation in InGaN thick films and formation of InGaN/GaN double heterostructures in the entire alloy composition
2. Compositional inhomogeneity and immiscibility of a GaInN ternary alloy
3. Phase separation in InGaN grown by metalorganic chemical vapor deposition
4. Domain structure in chemically ordered InxGa1−xN alloys grown by molecular beam epitaxy
5. Consistent structural properties for AlN, GaN, and InN
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