Application of the bond valence method in the non-isovalent semiconductor alloy (GaN)1−x(ZnO)x
Author:
Funder
U.S. Department of Energy
Publisher
IOP Publishing
Subject
Computer Science Applications,Mechanics of Materials,Condensed Matter Physics,General Materials Science,Modeling and Simulation
Link
http://stacks.iop.org/0965-0393/24/i=7/a=075014/pdf
Reference52 articles.
1. First principles phase diagram calculations for the wurtzite-structure systems AlN–GaN, GaN–InN, and AlN–InN
2. A direct first principles study on the structure and electronic properties of BexZn1−xO
3. First principles phase diagram calculations for the wurtzite-structure quasibinary systems SiC-AlN, SiC-GaN and SiC-InN
4. GaN:ZnO Solid Solution as a Photocatalyst for Visible-Light-Driven Overall Water Splitting
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