Hydrogen interactions with cavities in helium-implanted germanium

Author:

Myers S. M.,Stein H. J.,Follstaedt D. M.

Publisher

American Physical Society (APS)

Cited by 21 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Equilibrium shape of nano-cavities in H implanted ZnO;Applied Physics Letters;2015-05-25

2. Hydrogen interaction kinetics of Ge dangling bonds at the Si0.25Ge0.75/SiO2 interface;Journal of Applied Physics;2014-07-28

3. About extended defect formation in helium-implanted germanium;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2012-02

4. Investigation of a hydrogen implantation-induced blistering phenomenon in Si0.70Ge0.30;Semiconductor Science and Technology;2011-10-26

5. Germanium surface hydrophilicity and low-temperature Ge layer transfer by Ge–SiO2 bonding;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2010-07

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